The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach

Abdessamad Benhsaien; Zhenguo Lu; Karin Hinzer; Trevor James Hall

doi:doi:10.11648/j.nano.20170501.11

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The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach

Abdessamad Benhsaien, Zhenguo Lu, Karin Hinzer, Trevor James Hall

Published in American Journal of Nano Research and Applications (Volume 5, Issue 1)

Received: 28 February 2017 Accepted: 30 March 2017 Published: 17 April 2017

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Abstract

A first-order frequency-dependent formula of the linewidth broadening factor (α–factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occur provided the binding energy of the electron and hole is comparable to their eigenenergy-separation. The ensuing analysis is independent of the selected III-V material system and resides upon three simplifying assumptions which allow for analytical formulae to be derived.

Published in	American Journal of Nano Research and Applications (Volume 5, Issue 1)
DOI	10.11648/j.nano.20170501.11
Page(s)	1-6
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

α–Factor, Linewidth, Enhancement, Scattering, Spontaneous Emission, Exciton, Mesoscopic, Quantum Dot

References

[1]	I. D. Henning, J. V. Collins, “Measurements of the semiconductor laser linewidth broadening factor”, Electron. Lett., 19, pp. 927, 1983.
[2]	C. H. Henry, “Theory of the linewidth of semiconductor lasers”, IEEE J. Quantum Electron., 18, pp. 259-264, 1982.
[3]	A. Villafranca, J. A. Lázaro, I. Salinas and I. Garcés “Measurement of the Linewidth Enhancement Factor in DFB Lasers Using a High-Resolution Optical Spectrum Analyzer” IEEE Photon. Technol. Lett., 17, 2268-2270, 2005.
[4]	C. Harder, K. Vahala, A. Yariv, “Measurement of the linewidth enhancement factor of semiconductor lasers”, Appl. Phys. Lett., 42, pp. 328-330, 1983.
[5]	F. Devaux, Y. Sorel, J. F. Kerdiles “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter” J. Lightwave Technol., 11, 1993.
[6]	Hui, R.; Mecozzi, A.; D'Ottavi, A.; Spano, P, “Novel measurement technique of _ factor in DFB semiconductor lasers by injection locking”, Electron. Lett., 26, pp. 997 - 998, 1990.
[7]	Liu, G.; Jin, X.; Chuang, S. L., “Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique”, IEEE Photon. Technol. Lett., 13, pp. 430 - 432, 2001.
[8]	Y. Yu, G. Giuliani, S. Donati, "Measurement of the Linewidth Enhancement Factor of Semiconductor Lasers Based on the Optical Feedback Self-Mixing Effect", IEEE Photon. Technol. Lett., 16, pp. 990-992, 2004.
[9]	M. Sugawara, “Self-Assembled InGaAs/GaAs Quantum Dots”, Semiconductors and Semimetals, vol. 60, Academic Press, 1999, 0-12-752169-0.
[10]	S. L. Chuang, “Physics of Optoelectronic Devices”, Wiley Series in Pure and Applied Optics, 1995, ISBN 0471109398.
[11]	A. Benhsaien, “Self-Assembled Quantum Dot Semiconductor Nanostructures Modeling: Photonic Device Applications”, MASc thesis, 2006.
[12]	A. Benhsaien, T. J. Hall, “Self-Assembled Quantum Dot Semiconductor Nanostructure Modeling”, IEEE Journal of Optical and Quantum Electronics, OQEL565R1, 2008.
[13]	K. Dridi, A. Benhsaien, J. Zhang, T. J. Hall, “Narrow linewidth 1560 nm InGaAsP split-contact corrugated ridge waveguide DFB lasers’’, Optics Letters 39 (21) • October 2014.
[14]	K. Dridi, A. Benhsaien, J. Zhang, K. Hinzer, T. J. Hall, “Narrow linewidth two-electrode 1560 nm laterally coupled distributed feedback lasers with third-order surface etched gratings’’, Optics Express 22(16) August 2014.
[15]	K. Dridi, A. Benhsaien, J. Zhang, T. J. Hall, “Narrow Linewidth 1550 nm Corrugated Ridge Waveguide DFB Lasers’’, IEEE Photonics Technology Letters 26(12):1192-1195 June 2014.

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Abdessamad Benhsaien, Zhenguo Lu, Karin Hinzer, Trevor James Hall. (2017). The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach. American Journal of Nano Research and Applications, 5(1), 1-6. https://doi.org/10.11648/j.nano.20170501.11

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ACS Style

Abdessamad Benhsaien; Zhenguo Lu; Karin Hinzer; Trevor James Hall. The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach. Am. J. Nano Res. Appl. 2017, 5(1), 1-6. doi: 10.11648/j.nano.20170501.11

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AMA Style

Abdessamad Benhsaien, Zhenguo Lu, Karin Hinzer, Trevor James Hall. The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach. Am J Nano Res Appl. 2017;5(1):1-6. doi: 10.11648/j.nano.20170501.11

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@article{10.11648/j.nano.20170501.11,
  author = {Abdessamad Benhsaien and Zhenguo Lu and Karin Hinzer and Trevor James Hall},
  title = {The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach},
  journal = {American Journal of Nano Research and Applications},
  volume = {5},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.nano.20170501.11},
  url = {https://doi.org/10.11648/j.nano.20170501.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20170501.11},
  abstract = {A first-order frequency-dependent formula of the linewidth broadening factor (α–factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occur provided the binding energy of the electron and hole is comparable to their eigenenergy-separation. The ensuing analysis is independent of the selected III-V material system and resides upon three simplifying assumptions which allow for analytical formulae to be derived.},
 year = {2017}
}

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TY  - JOUR
T1  - The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach
AU  - Abdessamad Benhsaien
AU  - Zhenguo Lu
AU  - Karin Hinzer
AU  - Trevor James Hall
Y1  - 2017/04/17
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.20170501.11
DO  - 10.11648/j.nano.20170501.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20170501.11
AB  - A first-order frequency-dependent formula of the linewidth broadening factor (α–factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occur provided the binding energy of the electron and hole is comparable to their eigenenergy-separation. The ensuing analysis is independent of the selected III-V material system and resides upon three simplifying assumptions which allow for analytical formulae to be derived.
VL  - 5
IS  - 1
ER  -

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Author Information

Abdessamad Benhsaien

Department of Mathematics, CéGEP de l’Outaouais, Gatineau, Canada
Zhenguo Lu

Institute for Microstructural Sciences, National Research Council, Ottawa, Canada
Karin Hinzer

Centrre for Research in Photonics, University of Ottawa, Ottawa, Canada
Trevor James Hall

Centrre for Research in Photonics, University of Ottawa, Ottawa, Canada

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APA Style

Abdessamad Benhsaien, Zhenguo Lu, Karin Hinzer, Trevor James Hall. (2017). The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach. American Journal of Nano Research and Applications, 5(1), 1-6. https://doi.org/10.11648/j.nano.20170501.11

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ACS Style

Abdessamad Benhsaien; Zhenguo Lu; Karin Hinzer; Trevor James Hall. The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach. Am. J. Nano Res. Appl. 2017, 5(1), 1-6. doi: 10.11648/j.nano.20170501.11

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AMA Style

Abdessamad Benhsaien, Zhenguo Lu, Karin Hinzer, Trevor James Hall. The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach. Am J Nano Res Appl. 2017;5(1):1-6. doi: 10.11648/j.nano.20170501.11

Copy | Download

@article{10.11648/j.nano.20170501.11,
  author = {Abdessamad Benhsaien and Zhenguo Lu and Karin Hinzer and Trevor James Hall},
  title = {The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach},
  journal = {American Journal of Nano Research and Applications},
  volume = {5},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.nano.20170501.11},
  url = {https://doi.org/10.11648/j.nano.20170501.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20170501.11},
  abstract = {A first-order frequency-dependent formula of the linewidth broadening factor (α–factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occur provided the binding energy of the electron and hole is comparable to their eigenenergy-separation. The ensuing analysis is independent of the selected III-V material system and resides upon three simplifying assumptions which allow for analytical formulae to be derived.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach
AU  - Abdessamad Benhsaien
AU  - Zhenguo Lu
AU  - Karin Hinzer
AU  - Trevor James Hall
Y1  - 2017/04/17
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.20170501.11
DO  - 10.11648/j.nano.20170501.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20170501.11
AB  - A first-order frequency-dependent formula of the linewidth broadening factor (α–factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occur provided the binding energy of the electron and hole is comparable to their eigenenergy-separation. The ensuing analysis is independent of the selected III-V material system and resides upon three simplifying assumptions which allow for analytical formulae to be derived.
VL  - 5
IS  - 1
ER  -

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