Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors

Kathy Kyaw Min; Phyoe Sandar Win; Hla Myo Tun; Zaw Min Naing; Win Khaing Moe

doi:doi:10.11648/j.optics.20180701.16

| Peer-Reviewed

Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors

Kathy Kyaw Min, Phyoe Sandar Win, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe

Published in Optics (Volume 7, Issue 1)

Received: 24 June 2018 Accepted: 6 July 2018 Published: 2 August 2018

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

Researches in the field of III-V semiconductor photonic devices have initiate applications in a number of disciplines including lighting, optical communications and biomedical engineering. One of the limiting factors for getting better the photonic devices is the carrier relaxation time. This is the time obligatory for energetic carriers to cool to the edge of their particular bands in a bulk semiconductor material, or to the bottom of a well throughout inter- and intra-sub-band spreading in a heterojunction structure. From these lower energy states, they can afterwards recombine radiatively in photonic devices. This study exploited the nonlinear optical practice of frequency up conversion to complete time-resolved luminescence spectroscopy on epitaxial bulk GaAs samples to analyse carrier relaxation times in each as a function of excitation irradiance and temperature of the sample. There is no electrons and defect energy level in the energy curve for p-type samples. In this study, we focus on the recombination process of yellow-luminescence, which causes the decrease in emission efficiency. The variation of yellow-photoluminescence spectrum shape and intensity, which is caused by occupation YL centers by electrons and thermal activation processes of energy level transitions of electrons by phonon collision in GaAs. The measurement model explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in p-type semiconductors.

Published in	Optics (Volume 7, Issue 1)
DOI	10.11648/j.optics.20180701.16
Page(s)	38-42
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Photoluminescence Measurement, Excitation, Temperature Dependence, Carrier Relaxation, III-V Semiconductors

References

[1]	Jang, D. J., et al. “Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion,” Applied Physics Letters, 70 (9):1125–27 (March 1997).
[2]	Boggess, Thomas F., et al., “Ultrafast Optical Measurements of Carrier Dynamics in Antimonide-Based Quantum Wells.” Thirteenth Annual Solid State and Diode Laser Technology Review, June 5-8 2000.
[3]	Gorski, Steven M. Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence. MS thesis, Air Force Institute of Technology, Wright-Patterson AFB, OH, March 2002.
[4]	Agrawal, A. R. and N. K. Dutta. Semiconductor Lasers (2nd Edition). New York: ITP Van Nostrand Reinhold, 1993.
[5]	Cooley, W. T. Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material. PhD dissertation, Air Force Institute of Technology, Wright-Patterson AFB, OH, December 1997.
[6]	Johnson, Peter M. Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions. MS thesis, Air Force Institute of Technology, Wright-Patterson AFB, OH, March 2004.
[7]	McKelvey, J. P. Solid State Physics for Engineering and Materials Science. Malabar Florida: Krieger Publishing Company, 1993.
[8]	Brown, Ronald F. Solid State Physics: An Introduction for Scientists and Engineers. San Luis Obispo, CA: El Corral Publications, 1999.
[9]	Bhattacharya, Pallab. Semiconductor Optoelectronic Devices (Second Edition). Prentice Hall, 1997.
[10]	Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Berlin: Springer, 1996.
[11]	Yang, C. H., et al. “Hot electron Relaxation in GaAs QuantumWells,” Physical Review Letters, 55 (21):2359–2361 (November 1985).
[12]	Davis, L., et al. “Carrier Capture and Relaxation in Narrow Quantum Wells,” IEEE Journal of Quantum Electronics, 30:2560 (1994).
[13]	VadirajKalyaTulasidas, “Photoluminescence and applications of Ni: ZnS in photovoltaic cells”, Japanese Journal of Applied Physics 57, 052302 (2018).
[14]	Svetlana V. Boriskina, “Efficiency Limits of Solar Energy Harvesting via Internal Photoemission in Carbon Materials”, 5, 4; doi:10. 3390/photonics5010004, Photonics 2018.

Cite This Article

Plain Text BibTeX RIS

APA Style

Kathy Kyaw Min, Phyoe Sandar Win, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. (2018). Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors. Optics, 7(1), 38-42. https://doi.org/10.11648/j.optics.20180701.16

Copy | Download

ACS Style

Kathy Kyaw Min; Phyoe Sandar Win; Hla Myo Tun; Zaw Min Naing; Win Khaing Moe. Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors. Optics. 2018, 7(1), 38-42. doi: 10.11648/j.optics.20180701.16

Copy | Download

AMA Style

Kathy Kyaw Min, Phyoe Sandar Win, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors. Optics. 2018;7(1):38-42. doi: 10.11648/j.optics.20180701.16

Copy | Download

@article{10.11648/j.optics.20180701.16,
  author = {Kathy Kyaw Min and Phyoe Sandar Win and Hla Myo Tun and Zaw Min Naing and Win Khaing Moe},
  title = {Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors},
  journal = {Optics},
  volume = {7},
  number = {1},
  pages = {38-42},
  doi = {10.11648/j.optics.20180701.16},
  url = {https://doi.org/10.11648/j.optics.20180701.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.optics.20180701.16},
  abstract = {Researches in the field of III-V semiconductor photonic devices have initiate applications in a number of disciplines including lighting, optical communications and biomedical engineering. One of the limiting factors for getting better the photonic devices is the carrier relaxation time. This is the time obligatory for energetic carriers to cool to the edge of their particular bands in a bulk semiconductor material, or to the bottom of a well throughout inter- and intra-sub-band spreading in a heterojunction structure. From these lower energy states, they can afterwards recombine radiatively in photonic devices. This study exploited the nonlinear optical practice of frequency up conversion to complete time-resolved luminescence spectroscopy on epitaxial bulk GaAs samples to analyse carrier relaxation times in each as a function of excitation irradiance and temperature of the sample. There is no electrons and defect energy level in the energy curve for p-type samples. In this study, we focus on the recombination process of yellow-luminescence, which causes the decrease in emission efficiency. The variation of yellow-photoluminescence spectrum shape and intensity, which is caused by occupation YL centers by electrons and thermal activation processes of energy level transitions of electrons by phonon collision in GaAs. The measurement model explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in p-type semiconductors.},
 year = {2018}
}

Copy | Download

TY  - JOUR
T1  - Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors
AU  - Kathy Kyaw Min
AU  - Phyoe Sandar Win
AU  - Hla Myo Tun
AU  - Zaw Min Naing
AU  - Win Khaing Moe
Y1  - 2018/08/02
PY  - 2018
N1  - https://doi.org/10.11648/j.optics.20180701.16
DO  - 10.11648/j.optics.20180701.16
T2  - Optics
JF  - Optics
JO  - Optics
SP  - 38
EP  - 42
PB  - Science Publishing Group
SN  - 2328-7810
UR  - https://doi.org/10.11648/j.optics.20180701.16
AB  - Researches in the field of III-V semiconductor photonic devices have initiate applications in a number of disciplines including lighting, optical communications and biomedical engineering. One of the limiting factors for getting better the photonic devices is the carrier relaxation time. This is the time obligatory for energetic carriers to cool to the edge of their particular bands in a bulk semiconductor material, or to the bottom of a well throughout inter- and intra-sub-band spreading in a heterojunction structure. From these lower energy states, they can afterwards recombine radiatively in photonic devices. This study exploited the nonlinear optical practice of frequency up conversion to complete time-resolved luminescence spectroscopy on epitaxial bulk GaAs samples to analyse carrier relaxation times in each as a function of excitation irradiance and temperature of the sample. There is no electrons and defect energy level in the energy curve for p-type samples. In this study, we focus on the recombination process of yellow-luminescence, which causes the decrease in emission efficiency. The variation of yellow-photoluminescence spectrum shape and intensity, which is caused by occupation YL centers by electrons and thermal activation processes of energy level transitions of electrons by phonon collision in GaAs. The measurement model explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in p-type semiconductors.
VL  - 7
IS  - 1
ER  -

Copy | Download

Author Information

Kathy Kyaw Min

Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar
Phyoe Sandar Win

Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar
Hla Myo Tun

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Zaw Min Naing

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Win Khaing Moe

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Kathy Kyaw Min, Phyoe Sandar Win, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. (2018). Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors. Optics, 7(1), 38-42. https://doi.org/10.11648/j.optics.20180701.16

Copy | Download

ACS Style

Kathy Kyaw Min; Phyoe Sandar Win; Hla Myo Tun; Zaw Min Naing; Win Khaing Moe. Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors. Optics. 2018, 7(1), 38-42. doi: 10.11648/j.optics.20180701.16

Copy | Download

AMA Style

Kathy Kyaw Min, Phyoe Sandar Win, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors. Optics. 2018;7(1):38-42. doi: 10.11648/j.optics.20180701.16

Copy | Download

@article{10.11648/j.optics.20180701.16,
  author = {Kathy Kyaw Min and Phyoe Sandar Win and Hla Myo Tun and Zaw Min Naing and Win Khaing Moe},
  title = {Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors},
  journal = {Optics},
  volume = {7},
  number = {1},
  pages = {38-42},
  doi = {10.11648/j.optics.20180701.16},
  url = {https://doi.org/10.11648/j.optics.20180701.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.optics.20180701.16},
  abstract = {Researches in the field of III-V semiconductor photonic devices have initiate applications in a number of disciplines including lighting, optical communications and biomedical engineering. One of the limiting factors for getting better the photonic devices is the carrier relaxation time. This is the time obligatory for energetic carriers to cool to the edge of their particular bands in a bulk semiconductor material, or to the bottom of a well throughout inter- and intra-sub-band spreading in a heterojunction structure. From these lower energy states, they can afterwards recombine radiatively in photonic devices. This study exploited the nonlinear optical practice of frequency up conversion to complete time-resolved luminescence spectroscopy on epitaxial bulk GaAs samples to analyse carrier relaxation times in each as a function of excitation irradiance and temperature of the sample. There is no electrons and defect energy level in the energy curve for p-type samples. In this study, we focus on the recombination process of yellow-luminescence, which causes the decrease in emission efficiency. The variation of yellow-photoluminescence spectrum shape and intensity, which is caused by occupation YL centers by electrons and thermal activation processes of energy level transitions of electrons by phonon collision in GaAs. The measurement model explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in p-type semiconductors.},
 year = {2018}
}

Copy | Download

TY  - JOUR
T1  - Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors
AU  - Kathy Kyaw Min
AU  - Phyoe Sandar Win
AU  - Hla Myo Tun
AU  - Zaw Min Naing
AU  - Win Khaing Moe
Y1  - 2018/08/02
PY  - 2018
N1  - https://doi.org/10.11648/j.optics.20180701.16
DO  - 10.11648/j.optics.20180701.16
T2  - Optics
JF  - Optics
JO  - Optics
SP  - 38
EP  - 42
PB  - Science Publishing Group
SN  - 2328-7810
UR  - https://doi.org/10.11648/j.optics.20180701.16
AB  - Researches in the field of III-V semiconductor photonic devices have initiate applications in a number of disciplines including lighting, optical communications and biomedical engineering. One of the limiting factors for getting better the photonic devices is the carrier relaxation time. This is the time obligatory for energetic carriers to cool to the edge of their particular bands in a bulk semiconductor material, or to the bottom of a well throughout inter- and intra-sub-band spreading in a heterojunction structure. From these lower energy states, they can afterwards recombine radiatively in photonic devices. This study exploited the nonlinear optical practice of frequency up conversion to complete time-resolved luminescence spectroscopy on epitaxial bulk GaAs samples to analyse carrier relaxation times in each as a function of excitation irradiance and temperature of the sample. There is no electrons and defect energy level in the energy curve for p-type samples. In this study, we focus on the recombination process of yellow-luminescence, which causes the decrease in emission efficiency. The variation of yellow-photoluminescence spectrum shape and intensity, which is caused by occupation YL centers by electrons and thermal activation processes of energy level transitions of electrons by phonon collision in GaAs. The measurement model explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in p-type semiconductors.
VL  - 7
IS  - 1
ER  -

Copy | Download